Concentration of advanced research in one location (Dresden) for chiplet design, heterogeneous system integration, test and reliability
Joint resources of three Fraunhofer institutes IIS, IZM and ENAS as well as other partners from the R&D cooperation “Research Fab Microelectronics Germany (FMD)”
Start team of 10-15 experts, to be expanded over the next years
Excellent lab infrastructure and access to broad technology capabilities of the FMD cooperation:
200 / 300 mm 3D wafer-level process line (ISO 9001-15) with modules for:
Si- or glass-bridge/interposer
High-density RDL formation (1-2 µm line/space, via diameter 6 µm)
TSV/TGV formation (AR > 10)
Pre-assembly (thinning, singulation)
Wafer-level assembly
Stack formation
600 mm substrate line
High-density RDL formation (5 µm lines/spaces)
Organic or glass core interposers
Embedding of components
System level realization including board level assembly
Cooling and final encapsulation
In chip monitoring structures for control and reliability measurements
Powerful measurement equipment for wafer & package level up to 110 GHz
Chip design in leading edge e.g. 5 nm / 14 nm Samsung, 16 nm Intel, 16 nm TSMC, 22 nm Globalfoundries
Synthesis, simulation, verification based on fact data