Infrastructure

  • Concentration of advanced research in one location (Dresden) for chiplet design, heterogeneous system integration, test and reliability
  • Joint resources of three Fraunhofer institutes IIS, IZM and ENAS as well as other partners from the R&D cooperation “Research Fab Microelectronics Germany (FMD)”
  • Start team of 10-15 experts, to be expanded over the next years
  • Excellent lab infrastructure and access to broad technology capabilities of the FMD cooperation:
    • 200 / 300 mm 3D wafer-level process line (ISO 9001-15) with modules for:
      • Si- or glass-bridge/interposer
      • High-density RDL formation (1-2 µm line/space, via diameter 6 µm)
      • TSV/TGV formation (AR > 10)
      • Pre-assembly (thinning, singulation)
      • Wafer-level assembly
      • Stack formation
    • 600 mm substrate line
      • High-density RDL formation (5 µm lines/spaces)
      • Organic or glass core interposers
      • Embedding of components
      • System level realization including board level assembly
      • Cooling and final encapsulation
    • In chip monitoring structures for control and reliability measurements  ​
    • Powerful measurement equipment for wafer & package level up to 110 GHz
    • Chip design in leading edge e.g. 5 nm / 14 nm Samsung, 16 nm Intel, 16 nm TSMC, 22 nm Globalfoundries
    • Synthesis, simulation, verification based on fact data
    • Virtual Assessments
Chip design in leading edge e.g. 5nm / 14nm Samsung, 16nm Intel, 16nm TSMC, 22nm Globalfoundries
© Fraunhofer IIS/EAS, BLEND3